Ferroelectric Self-Poling in GeTe Films and Crystals

Ferroelectric switching in epitaxial GeTe films

Self-Poling of BiFeO3 Thick Films.

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick B...

Disentangling bulk and surface Rashba effects in ferroelectric α-GeTe

J. Krempaský,1 H. Volfová,2 S. Muff,1,3 N. Pilet,1 G. Landolt,1,4 M. Radović,1,5 M. Shi,1 D. Kriegner,6 V. Holý,6 J. Braun,2 H. Ebert,2 F. Bisti,1 V. A. Rogalev,1 V. N. Strocov,1 G. Springholz,7 J. Minár,2,8 and J. H. Dil1,3 1Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland 2Department of Chemistry, Ludwig Maximillian University, 81377 Munich, Germany 3Institute of ...

Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that ...

Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic fo...